IRF9952TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Drain to Source Breakdown Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Height :

1.4986mm

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Length :

4.9784mm

Mount :

Surface Mount

Resistance :

100MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

16A

Current Rating :

3.5A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

IRF9952PBF

Power Dissipation :

2W

Turn-Off Delay Time :

20 ns

Rise Time :

14ns

Lead Free :

Contains Lead, Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Factory Lead Time :

12 Weeks

Width :

3.9878mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Additional Feature :

High Reliability

Avalanche Energy Rating (Eas) :

44 mJ

FET Type :

N and P-Channel

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Published :

2004

ECCN Code :

EAR99

Series :

HEXFET®

Number of Pins :

8

Continuous Drain Current (ID) :

3.5A

Nominal Vgs :

1 V