IRF9317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Lead Free :

Lead Free

ECCN Code :

EAR99

Width :

3.9878mm

Fall Time (Typ) :

120 ns

Terminal Position :

Dual

Continuous Drain Current (ID) :

-16A

Avalanche Energy Rating (Eas) :

330 mJ

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 16A, 10V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Drain to Source Breakdown Voltage :

-30V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W

Turn-Off Delay Time :

160 ns

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

Threshold Voltage :

-1.8V

Rise Time :

64ns

FET Type :

P-Channel

Contact Plating :

Tin

Height :

1.4986mm

REACH SVHC :

No SVHC

Turn On Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

10.2mOhm

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Number of Elements :

1

Element Configuration :

Single

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-1.8 V

Published :

2009

Length :

4.9784mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON