IRF9321PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-1.8 V

Turn-Off Delay Time :

185 ns

Packaging :

Tube

Height :

1.75mm

Width :

4mm

Fall Time (Typ) :

145 ns

Element Configuration :

Single

Published :

2007

Number of Elements :

1

Number of Channels :

1

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

79ns

Number of Pins :

8

Recovery Time :

57 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

5mm

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-15A

Number of Terminations :

8

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.4V @ 50μA

FET Type :

P-Channel

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0072Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 15A, 10V

Threshold Voltage :

-1.8V

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON