IRF9321PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

FET Type :

P-Channel

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Lead Free :

Lead Free

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 15A, 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Published :

2007

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Mount :

Surface Mount

Nominal Vgs :

-1.8 V

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Turn On Delay Time :

21 ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

Rise Time :

79ns

Drain-source On Resistance-Max :

0.0072Ohm

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Fall Time (Typ) :

145 ns

Length :

5mm

Element Configuration :

Single

Height :

1.75mm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Threshold Voltage :

-1.8V

Recovery Time :

57 ns

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Width :

4mm

Drain to Source Breakdown Voltage :

-30V

Turn-Off Delay Time :

185 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

-15A

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE