IRF9204PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

7676pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Input Capacitance :

7.676nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

3V @ 100μA

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

-40V

Drain to Source Resistance :

23mOhm

Rds On (Max) @ Id, Vgs :

16mOhm @ 37A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Number of Elements :

1

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Power Dissipation-Max :

143W Tc

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Packaging :

Tube

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

56A Ta

Rds On Max :

16 mΩ

Power Dissipation :

143W

Max Operating Temperature :

175°C

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

56A

Series :

HEXFET®

Min Operating Temperature :

-55°C