IRF9328PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

57ns

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

96A

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

19 ns

FET Type :

P-Channel

ECCN Code :

EAR99

Number of Terminations :

8

Width :

3.9878mm

Turn-Off Delay Time :

80 ns

Height :

1.4986mm

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Mount :

Surface Mount

Transistor Element Material :

SILICON

Series :

HEXFET®

Power Dissipation :

2.5W

Recovery Time :

76 ns

Fall Time (Typ) :

66 ns

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Length :

4.9784mm

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-1.8 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Terminal Position :

Dual

Contact Plating :

Tin

Threshold Voltage :

-1.8V

Continuous Drain Current (ID) :

-12A

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 12A, 10V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Published :

2004

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Surface Mount