IRF9317PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

10 Weeks

Avalanche Energy Rating (Eas) :

330 mJ

Number of Elements :

1

Rise Time :

64ns

Packaging :

Tube

Terminal Position :

Dual

Published :

2010

Drain-source On Resistance-Max :

0.0066Ohm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 16A, 10V

Turn On Delay Time :

19 ns

Transistor Application :

SWITCHING

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Width :

4mm

Radiation Hardening :

No

Height :

1.5mm

Terminal Form :

Gull wing

Recovery Time :

50 ns

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

160 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-16A

Threshold Voltage :

-1.8V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

Element Configuration :

Single

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Fall Time (Typ) :

120 ns

Number of Terminations :

8

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Nominal Vgs :

-1.8 V

Mounting Type :

Surface Mount

Length :

5mm

ECCN Code :

EAR99