IRF9317PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Width :

4mm

Turn-Off Delay Time :

160 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

16A Ta

FET Type :

P-Channel

Height :

1.5mm

Length :

5mm

Continuous Drain Current (ID) :

-16A

Power Dissipation-Max :

2.5W Ta

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Recovery Time :

50 ns

Avalanche Energy Rating (Eas) :

330 mJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Drain to Source Breakdown Voltage :

-30V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Rise Time :

64ns

Threshold Voltage :

-1.8V

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 15V

Published :

2010

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Number of Elements :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0066Ohm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Terminal Position :

Dual

Fall Time (Typ) :

120 ns

Nominal Vgs :

-1.8 V

Turn On Delay Time :

19 ns

Number of Terminations :

8

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 16A, 10V