IRF9328TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Factory Lead Time :

12 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

-1.8 V

Width :

3.9878mm

Fall Time (Typ) :

66 ns

Power Dissipation-Max :

2.5W Ta

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

19 ns

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Series :

HEXFET®

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Rise Time :

57ns

Number of Elements :

1

Length :

4.9784mm

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Mount :

Surface Mount

Number of Pins :

8

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Turn-Off Delay Time :

80 ns

Pulsed Drain Current-Max (IDM) :

96A

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 12A, 10V

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Published :

2008

Threshold Voltage :

-1.8V

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Continuous Drain Current (ID) :

-12A

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Resistance :

11.9mOhm