IRF9952

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e0

Number of Elements :

2

Published :

2001

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

245

Avalanche Energy Rating (Eas) :

44 mJ

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Power - Max :

2W

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

16A

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Terminal Finish :

Tin/Lead (Sn/Pb)

Surface Mount :

yes

JEDEC-95 Code :

MS-012AA

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

FET Type :

N and P-Channel

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Series :

HEXFET®

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

3.5A

Drain-source On Resistance-Max :

0.1Ohm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Additional Feature :

High Reliability