IRF9910TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 12A, 10V

FET Feature :

Logic Level Gate

Number of Elements :

2

Base Part Number :

IRF9910PBF

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Height :

1.4986mm

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Width :

3.9878mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

33 mJ

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Length :

4.9784mm

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

JESD-609 Code :

e3

Resistance :

13.4MOhm

Lead Free :

Lead Free

Voltage - Rated DC :

20V

ECCN Code :

EAR99

Number of Terminations :

8

Continuous Drain Current (ID) :

10A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

10A 12A

Current Rating :

10A

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

2.55 V

FET Type :

2 N-Channel (Dual)