IRF9389TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

FET Type :

N and P-Channel

Base Part Number :

IRF9389

Max Power Dissipation :

2W

Element Configuration :

Dual

ECCN Code :

EAR99

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

34A

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn-Off Delay Time :

17 ns

Lead Free :

Lead Free

Published :

2008

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.8V

Rise Time :

14ns

Continuous Drain Current (ID) :

4.6A

Fall Time (Typ) :

15 ns

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

27m Ω @ 6.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.8A 4.6A

Height :

1.5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

5mm

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

398pF @ 15V

Power Dissipation :

2W

Mount :

Surface Mount

Number of Terminations :

8

Transistor Application :

SWITCHING

Number of Elements :

2

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Width :

4mm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.3V @ 10μA

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount