IRF8910TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4.1 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2.55 V

Turn On Delay Time :

6.2 ns

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Number of Pins :

8

Width :

4mm

Base Part Number :

IRF8910PBF

Factory Lead Time :

12 Weeks

Number of Elements :

2

Dual Supply Voltage :

20V

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Current Rating :

10A

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 10V

Published :

2008

Power Dissipation :

2W

Mount :

Surface Mount

ECCN Code :

EAR99

Max Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Termination :

SMD/SMT

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

10A

Length :

5mm

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Turn-Off Delay Time :

9.7 ns

Element Configuration :

Dual

Series :

HEXFET®

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Threshold Voltage :

2.55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Voltage - Rated DC :

20V

Resistance :

13.4MOhm