IRF8910TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.5mm

Length :

5mm

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

2.55V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

20V

Fall Time (Typ) :

4.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Max Power Dissipation :

2W

Resistance :

13.4MOhm

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 10V

Termination :

SMD/SMT

Width :

4mm

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

9.7 ns

Published :

2008

Number of Elements :

2

Voltage - Rated DC :

20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

ECCN Code :

EAR99

Mount :

Surface Mount

Mounting Type :

Surface Mount

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Nominal Vgs :

2.55 V

Power Dissipation :

2W

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Rise Time :

10ns

Current Rating :

10A

Base Part Number :

IRF8910PBF

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Continuous Drain Current (ID) :

10A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Turn On Delay Time :

6.2 ns