IRF8852TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Power Dissipation :

1W

JEDEC-95 Code :

MO-153AA

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Number of Pins :

8

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

11.3m Ω @ 7.8A, 10V

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

8

Continuous Drain Current (ID) :

7.8A

Transistor Element Material :

SILICON

Turn-Off Delay Time :

70.8 ns

Max Power Dissipation :

1W

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

28.9 ns

Drain to Source Breakdown Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1151pF @ 20V

Turn On Delay Time :

11.4 ns

Element Configuration :

Dual

Length :

3.0988mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Radiation Hardening :

No

Rise Time :

10.9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Base Part Number :

IRF8852PBF

Drain-source On Resistance-Max :

0.0113Ohm