IRF8513PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Max Operating Temperature :

175°C

Packaging :

Tube

Height :

1.4986mm

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

766pF @ 15V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Elements :

2

REACH SVHC :

No SVHC

Power Dissipation :

2.4W

Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

8A

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Supplier Device Package :

8-SO

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Rds On Max :

15.5 mΩ

Base Part Number :

IRF8513PBF

Max Power Dissipation :

2.4W

Threshold Voltage :

1.8V

Current - Continuous Drain (Id) @ 25°C :

8A 11A

Drain to Source Resistance :

22.2mOhm

Operating Temperature :

-55°C~175°C TJ

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1.8 V

Min Operating Temperature :

-55°C

Power - Max :

1.5W 2.4W

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 8A, 10V

Recovery Time :

23 ns

Lead Free :

Lead Free

Resistance :

15.5MOhm

Mount :

Surface Mount

Termination :

SMD/SMT

Input Capacitance :

766pF

Width :

3.9878mm