IRF8513PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2.4W

REACH SVHC :

No SVHC

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A 11A

Base Part Number :

IRF8513PBF

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

766pF @ 15V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2.4W

Rds On Max :

15.5 mΩ

Input Capacitance :

766pF

Max Operating Temperature :

175°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 8A, 10V

Threshold Voltage :

1.8V

Drain to Source Resistance :

22.2mOhm

Recovery Time :

23 ns

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

8A

Resistance :

15.5MOhm

Height :

1.4986mm

Supplier Device Package :

8-SO

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Published :

2008

RoHS Status :

RoHS Compliant

Termination :

SMD/SMT

Radiation Hardening :

No

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Pins :

8

Number of Elements :

2

Width :

3.9878mm

Nominal Vgs :

1.8 V

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Power - Max :

1.5W 2.4W

Mount :

Surface Mount