IRF7902TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Power - Max :

1.4W 2W

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

7.3 mJ

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

9.7A

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

Terminal Form :

Gull wing

Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

6.4A 9.7A

Published :

1999

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Series :

HEXFET®

Length :

4.9784mm

Lead Free :

Lead Free

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 15V

Rds On (Max) @ Id, Vgs :

22.6m Ω @ 6.4A, 10V

FET Type :

2 N-Channel (Dual)

Factory Lead Time :

12 Weeks

Base Part Number :

IRF7902PBF

Number of Terminations :

8

Resistance :

22.6mOhm

Element Configuration :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Pins :

8