IRF6811STRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Series :

HEXFET®

Fall Time (Typ) :

5.5 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

JESD-30 Code :

R-XBCC-N2

Avalanche Energy Rating (Eas) :

32 mJ

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

19A Ta 74A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Height :

700μm

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 13V

Number of Channels :

1

Contact Plating :

Copper, Silver, Tin

Case Connection :

DRAIN

Power Dissipation-Max :

2.1W Ta 32W Tc

Package / Case :

DirectFET™ Isometric SQ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Rise Time :

19ns

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

11 ns

Operating Temperature :

-40°C~150°C TJ

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

19A

Gate to Source Voltage (Vgs) :

16V

Qualification Status :

Not Qualified

Resistance :

3.7mOhm

Power Dissipation :

2.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

ECCN Code :

EAR99

Turn On Delay Time :

8.7 ns

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.1V @ 35µA

Drain Current-Max (Abs) (ID) :

74A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 19A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

25V

JESD-609 Code :

e1