IRF6725MTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

170A

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Published :

2004

Power Dissipation :

100W

Height :

506μm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Nominal Vgs :

1.8 V

Power Dissipation-Max :

2.8W Ta 100W Tc

Rise Time :

22ns

Threshold Voltage :

1.8V

Length :

6.35mm

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

Factory Lead Time :

17 Weeks

JESD-30 Code :

R-XBCC-N3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 28A, 10V

Turn-Off Delay Time :

19 ns

Width :

5.05mm

Turn On Delay Time :

16 ns

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0022Ohm

Package / Case :

DirectFET™ Isometric MX

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

190 mJ

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

220A

Number of Terminations :

3

Fall Time (Typ) :

13 ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

5

Current - Continuous Drain (Id) @ 25°C :

28A Ta 170A Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

28A

FET Type :

N-Channel