IRF6724MTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

5

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Package / Case :

DirectFET™ Isometric MX

Case Connection :

DRAIN

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

27A Ta 150A Tc

JESD-30 Code :

R-XBCC-N3

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Fall Time (Typ) :

16 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 27A, 10V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

23 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

89W

Drain to Source Breakdown Voltage :

30V

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

19ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4404pF @ 15V

Power Dissipation-Max :

2.8W Ta 89W Tc

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

27A

Transistor Element Material :

SILICON

Width :

5.05mm

Height :

506μm

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 4.5V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

12 mJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Length :

6.35mm

Pulsed Drain Current-Max (IDM) :

212A