IRF6655TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.2W Ta 42W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Lead Free :

Lead Free

JESD-609 Code :

e1

Power Dissipation :

42W

Width :

3.9624mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Factory Lead Time :

13 Weeks

Turn-Off Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Number of Terminations :

2

Radiation Hardening :

No

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

11 mJ

Series :

HEXFET®

Turn On Delay Time :

7.4 ns

Rise Time :

2.8ns

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

34A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Length :

4.826mm

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Package / Case :

DirectFET™ Isometric SH

FET Type :

N-Channel

Continuous Drain Current (ID) :

4.2mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

508μm

Published :

2006

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

100V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.062Ohm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.8V @ 25μA

Current Rating :

4.2A

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-XBCC-N2

ECCN Code :

EAR99

Fall Time (Typ) :

4.3 ns