IRF6641TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

DirectFET™ Isometric MZ

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Power Dissipation-Max :

2.8W Ta 89W Tc

Pulsed Drain Current-Max (IDM) :

37A

Factory Lead Time :

12 Weeks

Operating Temperature :

-40°C~150°C TJ

Voltage - Rated DC :

200V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Height :

506μm

Series :

HEXFET®

Rise Time :

11ns

Terminal Position :

BOTTOM

Turn-Off Delay Time :

31 ns

Number of Pins :

5

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 25V

Case Connection :

DRAIN

Turn On Delay Time :

16 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Width :

5.05mm

Mount :

Surface Mount

ECCN Code :

EAR99

Current Rating :

4.6A

Rds On (Max) @ Id, Vgs :

59.9m Ω @ 5.5A, 10V

JESD-30 Code :

R-XBCC-N3

Power Dissipation :

89W

Avalanche Energy Rating (Eas) :

46 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Continuous Drain Current (ID) :

3.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Resistance :

51mOhm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

26A

Length :

6.35mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 26A Tc

Fall Time (Typ) :

6.5 ns