HGT1S12N60A4S9A
- Mfr.Part #
- HGT1S12N60A4S9A
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 54A 167W TO263AB
- Stock
- 20,623
- In Stock :
- 20,623
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Power - Max :
- 167W
- Input Type :
- Standard
- Switching Energy :
- 55µJ (on), 50µJ (off)
- Current - Collector (Ic) (Max) :
- 54A
- Td (on/off) @ 25°C :
- 17ns/96ns
- Packaging :
- Tape and Reel (TR)
- Test Condition :
- 390V, 12A, 10 Ω, 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Base Part Number :
- HGT1S12N60
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Collector Pulsed (Icm) :
- 96A
- Mounting Type :
- Surface Mount
- Gate Charge :
- 78nC
- Datasheets
- HGT1S12N60A4S9A

HGT1S12N60A4S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGT1S12N60A4S9A Description
The HGT1S12N60A4S9A is a 600V, SMPS Series N-Channel IGBT, MOS-gated high voltage switching device combining the best features of MOSFETs and bipolar transistors
HGT1S12N60A4S9A Features
-
>100kHz Operation at 390V, 12A
-
200kHz Operation at 390V, 9A
-
600V Switching SOA Capability
-
Typical Fall Time 70ns at TJ = 125oC
-
Low Conduction Loss
-
Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
HGT1S12N60A4S9A Applications
-
Many high-voltage switching applications
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