HGT1S10N120BNS

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Transistor Element Material :

SILICON

Width :

9.65mm

Height :

4.83mm

Collector Emitter Voltage (VCEO) :

1.2kV

Weight :

1.31247g

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

HTS Code :

8541.29.00.95

Max Breakdown Voltage :

1.2kV

Packaging :

Tape and Reel (TR)

Current - Collector Pulsed (Icm) :

80A

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Length :

10.67mm

Collector Emitter Breakdown Voltage :

1.2kV

Published :

2017

Turn Off Time-Nom (toff) :

330 ns

Fall Time-Max (tf) :

200ns

Max Power Dissipation :

298W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Collector Emitter Saturation Voltage :

2.7V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate Charge :

100nC

Voltage - Rated DC :

1.2kV

Td (on/off) @ 25°C :

23ns/165ns

Test Condition :

960V, 10A, 10 Ω, 15V

Max Collector Current :

35A

Input Type :

Standard

Current Rating :

35A

Continuous Collector Current :

55A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Power Dissipation :

298W

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Factory Lead Time :

4 Weeks

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

NPT

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Number of Elements :

1

Rise Time-Max :

15ns

ECCN Code :

EAR99

Turn On Time :

32 ns

Switching Energy :

320μJ (on), 800μJ (off)

Base Part Number :

HGT1S10N120

Lead Free :

Lead Free

Mount :

Surface Mount

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Application :

Motor Control

Number of Pins :

3