HGT1S12N60A4DS

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Turn-Off Delay Time :

96 μs

Terminal Finish :

Tin (Sn)

Max Collector Current :

54A

Power Dissipation :

167W

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

96A

Pbfree Code :

yes

Additional Feature :

LOW CONDUCTION LOSS

Turn On Delay Time :

17 µs

ECCN Code :

EAR99

Max Power Dissipation :

167W

Td (on/off) @ 25°C :

17ns/96ns

Test Condition :

390V, 12A, 10 Ω, 15V

Radiation Hardening :

No

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Switching Energy :

55µJ (on), 50µJ (off)

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Base Part Number :

HGT1S12N60

Collector Emitter Voltage (VCEO) :

600V

Weight :

1.31247g

Element Configuration :

Single

Turn On Time :

33 ns

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

78nC

Terminal Form :

Gull wing

Number of Terminations :

2

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

HTS Code :

8541.29.00.95

Packaging :

Tube

Transistor Application :

POWER CONTROL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Turn Off Time-Nom (toff) :

180 ns

Collector Emitter Saturation Voltage :

2.7V

Mount :

Surface Mount

Reverse Recovery Time :

30ns

Time@Peak Reflow Temperature-Max (s) :

30