HGT1S10N120BNST

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

35A

Number of Terminations :

2

Max Power Dissipation :

298W

IGBT Type :

NPT

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Length :

10.67mm

JESD-609 Code :

e3

Test Condition :

960V, 10A, 10 Ω, 15V

Number of Pins :

3

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Fall Time-Max (tf) :

200ns

Collector Emitter Voltage (VCEO) :

1.2kV

Height :

4.83mm

Collector Emitter Breakdown Voltage :

1.2kV

Transistor Element Material :

SILICON

Power Dissipation :

298W

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Breakdown Voltage :

1.2kV

Current Rating :

35A

REACH SVHC :

No SVHC

Td (on/off) @ 25°C :

23ns/165ns

Published :

2017

Switching Energy :

320μJ (on), 800μJ (off)

Gate Charge :

100nC

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.7V

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Base Part Number :

HGT1S10N120

Voltage - Rated DC :

1.2kV

Additional Feature :

LOW CONDUCTION LOSS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Continuous Collector Current :

55A

Input Type :

Standard

Weight :

1.31247g

HTS Code :

8541.29.00.95

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Number of Elements :

1

Rise Time-Max :

15ns

Width :

9.65mm

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Voltage - Collector Emitter Breakdown (Max) :

1200V

Transistor Application :

Motor Control

Turn On Time :

32 ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

80A

Gate-Emitter Voltage-Max :

20V

Element Configuration :

Single

Turn Off Time-Nom (toff) :

330 ns