HGT1N30N60A4D
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- Mfr.Part #
- HGT1N30N60A4D
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- IGBT, 96A, 600V, N-CHANNEL
- Stock
- 4,272
- In Stock ：
- 4,272
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Modules
- Configuration :
- Single
- Max Collector Current :
- 96A
- Input :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 225W
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 600V
- Package / Case :
- SOT-227-4, miniBLOC
- Max Power Dissipation :
- 255W
- Mounting Type :
- Chassis Mount
- Mount :
- Chassis Mount, Screw
- Collector Emitter Saturation Voltage :
- 2.7V
- Collector Emitter Voltage (VCEO) :
- 600V
- Current - Collector Cutoff (Max) :
- 250μA
- Voltage - Rated DC :
- 600V
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 96A
- NTC Thermistor :
- No
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 30A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- HGT1N30N60A4D
HGT1N30N60A4D datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at
HGT1N30N60A4D Description
HGT1N30N60A4D is a type of MOS gated high voltage switching device optimized for high-frequency switch mode power supplies. It combines the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. Based on its specific characteristics, the HGT1N30N60A4D IGBT is able to provide optimum performance for many high-voltage switching applications operating at high frequencies where low conduction losses are essential.
HGT1N30N60A4D Features
Package: SOT-227
100kHz operation at 390V, 20A
600V switching SOA capability
Low conduction loss
High input impedance
HGT1N30N60A4D Applications
High voltage switching applications
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