HGT1N40N60A4D
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- Mfr.Part #
- HGT1N40N60A4D
- Manufacturer
- onsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- IGBT MOD 600V 110A 298W SOT227B
- Stock
- 24,118
- In Stock ：
- 24,118
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Modules
- Mounting Type :
- Chassis Mount
- Current - Collector (Ic) (Max) :
- 110A
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 40A
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-227-4, miniBLOC
- Published :
- 2001
- Supplier Device Package :
- SOT-227B
- Power - Max :
- 298W
- Input :
- Standard
- NTC Thermistor :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 250μA
- Datasheets
- HGT1N40N60A4D
HGT1N40N60A4D datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at
HGT1N40N60A4D Description
The HGT1N40N60A4D is a MOS gated high voltage switching device that combines the advantages of MOSFETs with bipolar transistors. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. This IGBT is suited for a variety of high-voltage switching applications that require minimal conduction losses and operate at high frequencies. This gadget was created with high-frequency switch-mode power supplies in mind.
HGT1N40N60A4D Features
-
Low Conduction Loss
-
100kHz Operation At 390V, 22A
-
600V Switching SOA Capability
-
Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
HGT1N40N60A4D Application
-
High voltage switching applications
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