DTD113ZCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

10 k Ω

Transistor Application :

SWITCHING

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-G3

Reach Compliance Code :

not_compliant

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

VCEsat-Max :

0.3 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 50mA 5V

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

1 k Ω

Transistor Type :

NPN - Pre-Biased

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

200MHz

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transition Frequency :

200MHz

Number of Terminations :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Max Power Dissipation :

200mW

Max Breakdown Voltage :

50V

Max Collector Current :

500mA

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10

Power - Max :

200mW

Factory Lead Time :

13 Weeks

Published :

2016