DTD114GCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Terminal Position :

Dual

Number of Elements :

1

Pin Count :

3

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Frequency - Transition :

200MHz

JESD-30 Code :

R-PDSO-G3

Max Power Dissipation :

200mW

Qualification Status :

Not Qualified

Transistor Type :

NPN - Pre-Biased

Published :

2016

Current - Collector Cutoff (Max) :

500nA ICBO

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Collector Emitter Voltage (VCEO) :

300mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Mounting Type :

Surface Mount

Power - Max :

200mW

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant