DTD114GCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10 k Ω

Pin Count :

3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Elements :

1

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency - Transition :

200MHz

Reach Compliance Code :

not_compliant

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Terminal Position :

Dual

Factory Lead Time :

13 Weeks

Published :

2016

JESD-30 Code :

R-PDSO-G3

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Number of Terminations :

3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Pre-Biased

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Power - Max :

200mW

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA ICBO