DTD114GCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Number of Terminations :

3

Power - Max :

200mW

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

500nA ICBO

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

200MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Transistor Type :

NPN - Pre-Biased

Collector Emitter Voltage (VCEO) :

300mV

Published :

2016

Factory Lead Time :

13 Weeks

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V