DTD114GCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Frequency - Transition :

200MHz

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA ICBO

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Factory Lead Time :

13 Weeks

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Power - Max :

200mW

Max Collector Current :

500mA

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Transistor Type :

NPN - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

Pin Count :

3