DTD113ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Frequency - Transition :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

200MHz

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

200mW

VCEsat-Max :

0.3 V

Resistor - Emitter Base (R2) :

1 k Ω

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

13 Weeks

Terminal Position :

Dual

ECCN Code :

EAR99

Pin Count :

3

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Power - Max :

200mW

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Published :

2016

Resistor - Base (R1) :

1 k Ω

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-G3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED