DTD113ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Breakdown Voltage :

50V

Operating Temperature (Max) :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Published :

2016

Transistor Element Material :

SILICON

Pin Count :

3

Factory Lead Time :

13 Weeks

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.3 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

200MHz

Mounting Type :

Surface Mount

Resistor - Base (R1) :

1 k Ω

ECCN Code :

EAR99

Max Collector Current :

500mA

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

1 k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Max Power Dissipation :

200mW

Transistor Type :

NPN - Pre-Biased

Power - Max :

200mW

Frequency - Transition :

200MHz

Mount :

Surface Mount