DTD114ESTP

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Base Part Number :

DTD114

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Through Hole

Current Rating :

500mA

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

200MHz

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

JESD-30 Code :

R-PSIP-T3

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Number of Elements :

1

Element Configuration :

Single

Mounting Type :

Through Hole

hFE Min :

56

JESD-609 Code :

e1

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

10 k Ω

Resistor - Emitter Base (R2) :

10 k Ω

Package / Case :

SC-72 Formed Leads

Packaging :

Tape and Box (TB)

Transistor Type :

NPN - Pre-Biased

Number of Terminations :

3

Published :

2006

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free

Pin Count :

3

Voltage - Rated DC :

50V

Polarity :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transition Frequency :

200MHz

Qualification Status :

Not Qualified

Max Collector Current :

500mA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260