DTD114ESTP

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Terminal Finish :

TIN SILVER COPPER

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Transistor Element Material :

SILICON

VCEsat-Max :

0.3 V

ECCN Code :

EAR99

Published :

2006

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

DTD114

Number of Terminations :

3

Packaging :

Tape and Box (TB)

Package / Case :

SC-72 Formed Leads

Max Operating Temperature :

150°C

Number of Elements :

1

Mounting Type :

Through Hole

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Frequency - Transition :

200MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Max Power Dissipation :

300mW

Transistor Type :

NPN - Pre-Biased

Resistor - Base (R1) :

10 k Ω

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

200MHz

Resistor - Emitter Base (R2) :

10 k Ω

Current Rating :

500mA

Qualification Status :

Not Qualified

hFE Min :

56

Polarity :

NPN