DTD114EKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

HTS Code :

8541.21.00.75

Number of Terminations :

3

Frequency - Transition :

200MHz

Min Operating Temperature :

-55°C

Current Rating :

500mA

Factory Lead Time :

13 Weeks

Transition Frequency :

200MHz

Number of Pins :

3

Length :

2.9mm

Radiation Hardening :

No

JESD-609 Code :

e1

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

NPN - Pre-Biased

Voltage - Rated DC :

50V

Resistor - Base (R1) :

10 k Ω

Element Configuration :

Single

Continuous Collector Current :

500mA

Resistor - Emitter Base (R2) :

10 k Ω

Power Dissipation :

200mW

Operating Supply Voltage :

50V

Max Output Current :

500mA

Pin Count :

3

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Gull wing

Polarity :

NPN

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Max Collector Current :

500mA

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Published :

2004

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

REACH SVHC :

No SVHC

Height :

1.1mm

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

DTD114

Mounting Type :

Surface Mount

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Width :

1.6mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Termination :

SMD/SMT

Max Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

56

Max Breakdown Voltage :

50V