DMG1024UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

ECCN Code :

EAR99

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

Pin Count :

6

Height :

600μm

REACH SVHC :

No SVHC

Base Part Number :

DMG1024UV

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.38A

Power Dissipation :

530mW

Rise Time :

7.4ns

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

15 Weeks

Turn-Off Delay Time :

26.7 ns

Fall Time (Typ) :

12.3 ns

Width :

1.25mm

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

6V

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

Weight :

3.005049mg

Number of Elements :

2

Radiation Hardening :

No

Resistance :

10Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

450m Ω @ 600mA, 4.5V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn On Delay Time :

5.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

530mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-563, SOT-666

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

1.39A

Number of Terminations :

6

Published :

2010

Terminal Form :

Flat

Length :

1.7mm