DMG1016V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Fall Time (Typ) :

20.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5.1 ns

Gate to Source Voltage (Vgs) :

6V

Factory Lead Time :

15 Weeks

Length :

1.7mm

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Resistance :

700mOhm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Additional Feature :

High Reliability

Reference Standard :

AEC-Q101

Max Power Dissipation :

530mW

Terminal Form :

Flat

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Rise Time :

8.1ns

Weight :

3.005049mg

Width :

1.25mm

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DMG1016V

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

870mA 640mA

Drain Current-Max (Abs) (ID) :

0.87A

Published :

2009

Pin Count :

6

Number of Pins :

6

JESD-609 Code :

e3

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

FET Type :

N and P-Channel

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

28.4 ns

Power Dissipation :

530mW

Height :

600μm

Threshold Voltage :

1V

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Continuous Drain Current (ID) :

640mA