DMG1012T-7
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- Mfr.Part #
- DMG1012T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 630MA SOT-523
- Stock
- 113,812
- In Stock ：
- 113,812
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 400 mΩ
- Weight :
- 2.012816mg
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-523
- Fall Time (Typ) :
- 12.3 ns
- Drain to Source Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 600mA, 4.5V
- Number of Channels :
- 1
- Vgs (Max) :
- ±6V
- Published :
- 2012
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Ta
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 20V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Power Dissipation :
- 280mW
- Input Capacitance (Ciss) (Max) @ Vds :
- 60.67pF @ 16V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Factory Lead Time :
- 14 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 0.74nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 7.4ns
- Width :
- 850μm
- Resistance :
- 400mOhm
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 280mW Ta
- Turn On Delay Time :
- 5.1 ns
- Turn-Off Delay Time :
- 26.7 ns
- Input Capacitance :
- 60.67pF
- Number of Elements :
- 1
- Threshold Voltage :
- 1V
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 630mA
- Length :
- 1.7mm
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 300mOhm
- Supplier Device Package :
- SOT-523
- Height :
- 800μm
- Datasheets
- DMG1012T-7
N-Channel Tape & Reel (TR) 400mOhm @ 600mA, 4.5V ±6V 60.67pF @ 16V 0.74nC @ 4.5V 20V SOT-523
DMG1012T-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 630mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26.7 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 300mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMG1012T-7 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
single MOSFETs transistor is 300mOhm
a threshold voltage of 1V
a 20V drain to source voltage (Vdss)
DMG1012T-7 Applications
There are a lot of Diodes Incorporated
DMG1012T-7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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