DMG1012TQ-7
- Mfr.Part #
- DMG1012TQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 630MA SOT523
- Stock
- 234,988
- In Stock :
- 234,988
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 630mA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 280mW
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 630mA Ta
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 60.67pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs :
- 0.74nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 600mA, 4.5V
- Height :
- 900μm
- Vgs (Max) :
- ±6V
- Gate to Source Voltage (Vgs) :
- 6V
- Turn-Off Delay Time :
- 26.7 ns
- Drain to Source Breakdown Voltage :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Max Junction Temperature (Tj) :
- 150°C
- Drain-source On Resistance-Max :
- 0.4Ohm
- Power Dissipation-Max :
- 280mW Ta
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 14 Weeks
- Number of Channels :
- 1
- Package / Case :
- SOT-523
- Turn On Delay Time :
- 5.1 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Datasheets
- DMG1012TQ-7

N-Channel Tape & Reel (TR) 400m Ω @ 600mA, 4.5V ±6V 60.67pF @ 16V 0.74nC @ 4.5V SOT-523
DMG1012TQ-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 630mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26.7 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
DMG1012TQ-7 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
DMG1012TQ-7 Applications
There are a lot of Diodes Incorporated
DMG1012TQ-7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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