DMG1016UDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

450m Ω @ 600mA, 4.5V

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

Pbfree Code :

yes

Contact Plating :

Tin

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Rise Time :

7.4ns

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

6-TSSOP, SC-88, SOT-363

Width :

1.35mm

Turn-Off Delay Time :

26.7 ns

Length :

2.2mm

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

1.07A 845mA

Threshold Voltage :

1V

Turn On Delay Time :

5.1 ns

Number of Terminations :

6

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Continuous Drain Current (ID) :

-845mA

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

FET Type :

N and P-Channel

Weight :

6.010099mg

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Lead Free :

Lead Free

Fall Time (Typ) :

12.3 ns

Pin Count :

6

Resistance :

750mOhm

Max Power Dissipation :

330mW

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

6V

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DMG1016UDW

Factory Lead Time :

16 Weeks

Number of Pins :

6

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

330mW

Mounting Type :

Surface Mount

JESD-609 Code :

e3