DMG1013T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5.1 ns

Fall Time (Typ) :

20.7 ns

Number of Terminations :

3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Weight :

2.012816mg

Number of Channels :

1

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

270mW

Height :

900μm

Rds On (Max) @ Id, Vgs :

700m Ω @ 350mA, 4.5V

Radiation Hardening :

No

Threshold Voltage :

-1V

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs (Max) :

±6V

Length :

1.7mm

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.46A

Package / Case :

SOT-523

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

460mA Ta

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-460mA

RoHS Status :

ROHS3 Compliant

Rise Time :

8.1ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

59.76pF @ 16V

FET Type :

P-Channel

Resistance :

700mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

6V

Gate Charge (Qg) (Max) @ Vgs :

0.622nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

270mW Ta

Number of Elements :

1

Published :

2009

Additional Feature :

High Reliability

Lead Free :

Lead Free

Width :

850μm

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Single

Turn-Off Delay Time :

28.4 ns

Contact Plating :

Tin