DMG1013T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Additional Feature :

High Reliability

Vgs (Max) :

±6V

Input Capacitance (Ciss) (Max) @ Vds :

59.76pF @ 16V

Drain Current-Max (Abs) (ID) :

0.46A

Number of Channels :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.622nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Height :

900μm

Number of Pins :

3

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

700m Ω @ 350mA, 4.5V

Gate to Source Voltage (Vgs) :

6V

Pbfree Code :

yes

Weight :

2.012816mg

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-523

Fall Time (Typ) :

20.7 ns

Power Dissipation :

270mW

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

28.4 ns

Mount :

Surface Mount

Lead Free :

Lead Free

Turn On Delay Time :

5.1 ns

Published :

2009

Contact Plating :

Tin

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Element Configuration :

Single

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

460mA Ta

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

-460mA

Rise Time :

8.1ns

Width :

850μm

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

1.7mm

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

700mOhm

Threshold Voltage :

-1V

Power Dissipation-Max :

270mW Ta

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3