DMG1023UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

530mW

Height :

600μm

Max Power Dissipation :

530mW

Resistance :

750mOhm

Drain to Source Breakdown Voltage :

-20V

Weight :

3.005049mg

Threshold Voltage :

-1V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 250μA

Base Part Number :

DMG1023UV

ECCN Code :

EAR99

Lead Free :

Lead Free

Rise Time :

8.1ns

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

59.76pF @ 16V

Turn-Off Delay Time :

28.4 ns

Length :

1.7mm

Rds On (Max) @ Id, Vgs :

750m Ω @ 430mA, 4.5V

FET Type :

2 P-Channel (Dual)

Continuous Drain Current (ID) :

1.03A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

20.7 ns

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

6V

RoHS Status :

ROHS3 Compliant

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5.1 ns

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

15 Weeks

Terminal Form :

Flat

REACH SVHC :

No SVHC

Number of Elements :

2

Width :

1.25mm

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

0.62nC @ 4.5V

Radiation Hardening :

No