DMG1013TQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

460mA Ta

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

14 Weeks

Vgs (Max) :

±6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Surface Mount :

yes

Package / Case :

SOT-523

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.7Ohm

Input Capacitance (Ciss) (Max) @ Vds :

59.76pF @ 16V

Drain Current-Max (Abs) (ID) :

0.46A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

700m Ω @ 350mA, 4.5V

DS Breakdown Voltage-Min :

20V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

0.58nC @ 4.5V

Series :

Automotive, AEC-Q101

Additional Feature :

High Reliability

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

270mW Ta

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE