BSO612CV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

235

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

RoHS Status :

Non-RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 20µA

Turn-Off Delay Time :

145 ns

Published :

1999

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Radiation Hardening :

No

Continuous Drain Current (ID) :

2A

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Number of Terminations :

8

Number of Pins :

8

Base Part Number :

BSO612

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.12Ohm

Series :

SIPMOS®

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current Rating :

3A

ECCN Code :

EAR99

Fall Time (Typ) :

95 ns

Drain to Source Breakdown Voltage :

-60V

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

Current - Continuous Drain (Id) @ 25°C :

3A 2A

Max Power Dissipation :

2W

Power Dissipation :

2W

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

3A

Rise Time :

60ns

Avalanche Energy Rating (Eas) :

47 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard