BSO612CV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

3A

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

-60V

Fall Time (Typ) :

95 ns

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

3A

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

3A 2A

Series :

SIPMOS®

FET Feature :

Standard

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Turn-Off Delay Time :

145 ns

ECCN Code :

EAR99

Base Part Number :

BSO612

Rise Time :

60ns

Drain-source On Resistance-Max :

0.12Ohm

Number of Pins :

8

Peak Reflow Temperature (Cel) :

235

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

8

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Published :

1999

Terminal Position :

Dual

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

Avalanche Energy Rating (Eas) :

47 mJ

Lead Free :

Contains Lead

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

4V @ 20µA

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

2A