BSO613SPV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-60V

Peak Reflow Temperature (Cel) :

235

Mount :

Surface Mount

Pin Count :

8

Current Rating :

-3.44A

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

13.8A

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Continuous Drain (Id) @ 25°C :

3.44A Ta

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Published :

1999

FET Type :

P-Channel

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.44A, 10V

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Terminal Form :

Gull wing

Terminal Position :

Dual

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.44A

Number of Elements :

1

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.13Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Series :

SIPMOS®

Avalanche Energy Rating (Eas) :

150 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V