BSO613SPV
- Mfr.Part #
- BSO613SPV
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 3.44A 8DSO
- Stock
- 8,458
- In Stock :
- 8,458
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G8
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 3.44A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Number of Terminations :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 875pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 2.5W Ta
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Pin Count :
- 8
- FET Type :
- P-Channel
- Voltage - Rated DC :
- -60V
- Current - Continuous Drain (Id) @ 25°C :
- 3.44A Ta
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Drain-source On Resistance-Max :
- 0.13Ohm
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 3.44A
- Current Rating :
- -3.44A
- Published :
- 1999
- Series :
- SIPMOS®
- RoHS Status :
- Non-RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Peak Reflow Temperature (Cel) :
- 235
- HTS Code :
- 8541.29.00.95
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pulsed Drain Current-Max (IDM) :
- 13.8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Datasheets
- BSO613SPV

P-Channel Tape & Reel (TR) 130m Ω @ 3.44A, 10V ±20V 875pF @ 25V 30nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)
BSO613SPV Description
BSO613SPV is a -60v SIPMOS? Power-Transistor. The power MOSFET BSO613SPV is the most common power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair. In particular, it is the most widely used low-voltage (less than 200 V) switch. It can be found in a wide range of applications, such as most power supplies, DC-to-DC converters, low-voltage motor controllers, and many other applications.
BSO613SPV Features
-
P-Channel
-
Enhancement mode
-
Avalanche rated
-
dv/dt rated
-
Pb-free lead plating; RoHS compliant
-
Qualified according to AEC Q101
-
Halogen-free according to IEC61249-2-21
BSO613SPV Applications
-
Consumer electronics
-
Transportation technology
-
Automotive industry
-
Power supplies
-
DC-to-DC converters
-
Low-voltage motor controllers
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