BSO613SPVGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Halogen Free :

Not Halogen Free

Pbfree Code :

yes

Number of Elements :

1

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Manufacturer Package Identifier :

PG-SO 8

Current Rating :

-3.44A

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

-60V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Number of Terminations :

8

FET Type :

P-Channel

Terminal Form :

Gull wing

Factory Lead Time :

26 Weeks

Drain to Source Breakdown Voltage :

-60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Published :

1999

Terminal Position :

Dual

Turn-Off Delay Time :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Continuous Drain Current (ID) :

-3.44A

Threshold Voltage :

-3V

Voltage - Rated DC :

-60V

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

3.44A Ta

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Mount :

Surface Mount

Series :

SIPMOS®

Vgs (Max) :

±20V

Number of Pins :

8

Rise Time :

11ns

Turn On Delay Time :

10 ns

Number of Channels :

1

Pin Count :

8

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.44A, 10V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

1.75mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99