BSO615NGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Published :

2005

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

2.6A

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.6A, 4.5V

Pin Count :

8

Packaging :

Tape and Reel (TR)

Factory Lead Time :

26 Weeks

JESD-609 Code :

e3

Lead Free :

Lead Free

Voltage - Rated DC :

60V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Contact Plating :

Tin

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 20μA

Pbfree Code :

yes

Base Part Number :

BSO615

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rise Time :

15ns

Number of Elements :

2

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Drain-source On Resistance-Max :

0.15Ohm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Avalanche Energy Rating (Eas) :

60 mJ

Halogen Free :

Not Halogen Free

Number of Pins :

8

Max Dual Supply Voltage :

60V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

10.4A

Continuous Drain Current (ID) :

2.6A