BSO615NGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.15Ohm

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

2V @ 20μA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

2.6A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Published :

2005

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.6A, 4.5V

Pbfree Code :

yes

Power Dissipation :

2W

Base Part Number :

BSO615

FET Feature :

Logic Level Gate

Contact Plating :

Tin

Rise Time :

15ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Pin Count :

8

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Current Rating :

2.6A

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Halogen Free :

Not Halogen Free

Max Dual Supply Voltage :

60V

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Factory Lead Time :

26 Weeks

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

10.4A

Avalanche Energy Rating (Eas) :

60 mJ