BSO615NGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

150m Ω @ 2.6A, 4.5V

Max Dual Supply Voltage :

60V

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Feature :

Logic Level Gate

Published :

2005

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.6A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.15Ohm

ECCN Code :

EAR99

Rise Time :

15ns

Vgs(th) (Max) @ Id :

2V @ 20μA

Current Rating :

2.6A

Halogen Free :

Not Halogen Free

FET Type :

2 N-Channel (Dual)

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Voltage - Rated DC :

60V

Pulsed Drain Current-Max (IDM) :

10.4A

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Base Part Number :

BSO615

JESD-609 Code :

e3

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

60 mJ

Series :

SIPMOS®

Packaging :

Tape and Reel (TR)