BSO613SPVGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Infineon

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Number of Channels :

1 Channel

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.44A (Ta)

Series :

Automotive, AEC-Q101, SIPMOS®

Channel Mode :

Enhancement

Transistor Type :

1 P-Channel

Package / Case :

SOIC-8

Product Category :

MOSFET

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Reach Compliance Code :

Compliant

Rise Time :

11 ns

Polarity :

P

RoHS :

Details

Gate-Source Voltage (Max) :

±20(V)

Number of Elements :

1

Operating Temp Range :

-55C to 150C

Input Capacitance (Ciss) (Max) @ Vds :

875 pF @ 25 V

Operating Temperature Classification :

Military

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Vgs(th) (Max) @ Id :

4V @ 1mA

Supplier Device Package :

PG-DSO-8-6

Brand :

Infineon Technologies

Factory Lead Time :

26 Weeks

Mounting Style :

SMD/SMT

Technology :

Si

Base Product Number :

BSO613

Maximum Operating Temperature :

+ 150 C

Drain-Source On-Volt :

60(V)

Type :

Small Signal

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Rad Hardened :

No

Transistor Polarity :

P-Channel

Rds On (Max) @ Id, Vgs :

130mOhm @ 3.44A, 10V

Power Dissipation :

2.5(W)

Power Dissipation (Max) :

2.5W (Ta)

Packaging :

Tape and Reel

Subcategory :

MOSFETs

Vgs (Max) :

±20V

FET Type :

P-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

60 V

Minimum Operating Temperature :

- 55 C

Continuous Drain Current :

3.44(A)