BSO612CVGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Published :

1999

Power Dissipation :

2W

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

47 mJ

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

2A

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

SIPMOS®

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

3A 2A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

BSO612

Max Dual Supply Voltage :

-60V

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Elements :

2

Terminal Position :

Dual

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

4V @ 20µA

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Current Rating :

3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Drain Current-Max (Abs) (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

JESD-609 Code :

e4

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Halogen Free :

Not Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Number of Pins :

8