BSO604NS2XUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Series :

OptiMOS™

Voltage - Rated DC :

55V

Drain-source On Resistance-Max :

0.044Ohm

Power - Max :

2W

Lead Free :

Lead Free

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

20A

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

55V

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

Published :

2008

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

35m Ω @ 2.5A, 10V

Contact Plating :

Tin

FET Feature :

Logic Level Gate

Base Part Number :

BSO604NS2

Factory Lead Time :

8 Weeks

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

90 mJ

Current Rating :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rise Time :

8ns

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 30μA

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A