BSO330N02KGFUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Series :

OptiMOS™

Turn On Delay Time :

7.4 ns

Max Power Dissipation :

1.4W

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Continuous Drain Current (ID) :

5.4A

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Power Dissipation :

2.5W

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 10V

Drain-source On Resistance-Max :

0.03Ohm

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

2.8 ns

Turn-Off Delay Time :

13.4 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

16.8ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.2V @ 20µA

Published :

2008

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 4.5V

Number of Terminations :

8

Base Part Number :

BSO330N02

Avalanche Energy Rating (Eas) :

19 mJ

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V