BSO303SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Package Shape :

RECTANGULAR

Product Status :

Active

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id :

8.9

FET Type :

P-Channel

Terminal Finish :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30 V

DS Breakdown Voltage-Min :

30 V

Supplier Device Package :

PG-DSO-8-1

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 100µA

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

35.6 A

Gate Charge (Qg) (Max) @ Vgs :

54 nC @ 10 V

FET Feature :

-

Avalanche Energy Rating (Eas) :

97 mJ

Surface Mount :

yes

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Technology :

MOSFET (Metal Oxide)

Drain-source On Resistance-Max :

0.021 Ω

Reach Compliance Code :

Unknown

Number of Elements :

1

Power Dissipation (Max) :

1.56W (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Number of Terminals :

8

Channel Type :

P

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Manufacturer :

Rochester Electronics LLC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2330 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

7.2A (Ta)

Transistor Element Material :

SILICON

Series :

OptiMOS® -P

Qualification Status :

COMMERCIAL

Package :

Bulk

Additional Feature :

AVALANCHE RATED,LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

21mOhm @ 9.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Polarity/Channel Type :

P-Channel