BSO303SPH
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- Mfr.Part #
- BSO303SPH
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- 7.2A, 30V, 0.021OHM, P-CHANNEL,
- Stock
- 2,561
- In Stock ：
- 2,561
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.56W
- Published :
- 2011
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- -30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 17 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Continuous Drain Current (ID) :
- 7.2A
- Power Dissipation-Max :
- 1.56W Ta
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 8
- Halogen Free :
- Halogen Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 36A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2330pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 9.1A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Ta
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Series :
- OptiMOS™
- Rise Time :
- 11ns
- Vgs(th) (Max) @ Id :
- 2V @ 100µA
- Datasheets
- BSO303SPH
P-Channel Tape & Reel (TR) 21m Ω @ 9.1A, 10V ±20V 2330pF @ 25V 54nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
BSO303SPHXUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 97 mJ.A device's maximum input capacitance is 2330pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by -30V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
BSO303SPHXUMA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 7.2A
based on its rated peak drain current 36A.
a 30V drain to source voltage (Vdss)
BSO303SPHXUMA1 Applications
There are a lot of Infineon Technologies
BSO303SPHXUMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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