BSO303PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Turn On Delay Time :

10.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

1761pF @ 25V

Turn-Off Delay Time :

55.4 ns

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.2A, 10V

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

72.5nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

97 mJ

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Series :

OptiMOS™

Rise Time :

12.9ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Radiation Hardening :

No

DS Breakdown Voltage-Min :

30V

Number of Elements :

2

Vgs(th) (Max) @ Id :

2V @ 100µA

Published :

2008

FET Feature :

Logic Level Gate

Lead Free :

Contains Lead

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

8

Fall Time (Typ) :

39.3 ns