BSO350N03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 5V

Drain Current-Max (Abs) (ID) :

5A

JEDEC-95 Code :

MS-012AA

Current Rating :

6A

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 15V

Pbfree Code :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 6μA

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Rise Time :

2.2ns

Turn-Off Delay Time :

8.7 ns

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.035Ohm

Voltage - Rated DC :

30V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Power Dissipation :

1.4W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2008

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

BSO350N03

Fall Time (Typ) :

2.2 ns

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

JESD-609 Code :

e3

Max Power Dissipation :

1.4W

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 10V

Time@Peak Reflow Temperature-Max (s) :

40